| PART |
Description |
Maker |
| EDI8F3265C20MZC EDI8F3265C20MMC |
High Speed, Dual Channel Power MOSFET Drivers; Temperature Range: -40°C to 85°C; Package: 8-SOIC T&R X32号的SRAM模块
|
TE Connectivity, Ltd.
|
| ISL74422ARH ISL74422ARHF_PROTO ISL74422ARHY_SAMPLE |
9 A BUF OR INV BASED MOSFET DRIVER, CDFP16
Radiation Hardened 9A, Non-Inverting Power Radiation Hardened 9A, Non-Inverting Power
9A, Non-Inverting Power MOSFET Drivers; Temperature Range: -55°C to 125°C; Package: Die (Military Visual) BUF OR INV BASED MOSFET DRIVER, UUC
|
Intersil Corporation
Intersil, Corp.
|
| FDMS5352 |
60V N-Channel Power Trench MOSFET; Package: Power 56 (PQFN); No of Pins: 8; Container: Tape & Reel
60V N-Channel Power TrenchMOSFET
|
FAIRCHILD SEMICONDUCTOR CORP
|
| HIP1012ACBZA-T |
Dual Power Distribution Controller; Temperature Range: 0°C to 70°C; Package: 14-SOIC T&R 2-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO14
|
Intersil, Corp.
|
| EDI8F32259C35MNC EDI8F32259C35MMC EDI8G32259B12MZC |
High Speed, Single Channel, Power MOSFET Driver; Temperature Range: -40°C to 85°C; Package: 8-PDIP
x32 SRAM Module
TFT-LCD DC/DC with Integrated Amplifiers; Temperature Range: -40°C to 85°C; Package: 32-QFN T&R X32号的SRAM模块
|
Integrated Device Technology, Inc.
Samsung Semiconductor Co., Ltd.
|
| EDI8F32259C EDI8F32259C-MM EDI8F32259C-MN EDI8G322 |
256Kx32 Static RAM CMOS, High Speed Module(256Kx8 CMOS高速静态RAM模块)
High Speed, Single Channel, Power MOSFET Driver; Temperature Range: -40°C to 85°C; Package: 8-SOIC T&R
TFT-LCD DC/DC with Integrated Amplifiers; Temperature Range: -40°C to 85°C; Package: 32-QFN T&R SRAM模块
|
White Electronic Designs Corporation
|
| NTB25P06T4G NTB25P06 NTB25P06G NTB25P06T4 |
Power MOSFET 25 A, 60 V P-Channel D2PAK
Power MOSFET −60 V, −27.5 A, P−Channel D2PAK 27.5 A, 60 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOSFET −60 V, −27.5 A, P−Channel D2PAK
Power MOSFET -60 V, -27.5 A, P-Channel D2PAK
|
ONSEMI[ON Semiconductor]
|
| NTK3139P NTK3139PT1G NTK3139PT5G |
Power MOSFET 20 V, 780 mA, Single P-Channel
POWER MOSFET −20 V, −780 MA, SINGLE P−CHANNEL WITH ESD PROTECTION, SOT−723
Power MOSFET −20 V, −780 mA, Single P−Channel with ESD Protection, SOT−723 0.78 A, 20 V, 0.48 ohm, P-CHANNEL, Si, POWER, MOSFET
|
ON Semiconductor
|
| IRFS644BFP001 |
250V N-Channel B-FET / Substitute of IRFS644 & IRFS644A; ; No of Pins: 3; Container: Rail 14 A, 250 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
|
| ISL9214A ISL9214AIRZ ISL9214AIRZ-T |
Li-ion/Li-Polymer Battery Charger Accepting Two Power Sources; Temperature Range: -40°C to 85°C; Package: 10-DFN T&R 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO10
|
Intersil Corporation
Intersil, Corp.
|
| NTHC5513T1 |
Power MOSFET 20 V, 3.9 A / −3.0 A, Complementary ChipFET-TM 3.1 A, 20 V, 0.08 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
|
ON Semiconductor
|
